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| Ordering number:EN3076 FC108 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features * On-chip bias resistors (R1=47k, R2=47k) * Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC108 is formed with two chips, being equivalent to the 2SC3395, placed in one package. * Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC108] Electrical Connection C1:Collector1 C2:Collector2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg 1 unit Conditions Ratings 50 50 10 100 200 200 300 150 -55 to+150 Unit V V V mA mA mW mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Cob VCB=40V, IE=0 VCE=40V, IB=0 VEB=5V, IC=0 VCE=5V, IC=5mA VCE=10V, IC=5mA VCB=10V, f=1MHz 50 50 0.8 1.0 32 0.9 1.1 2.5 47 1.0 1.5 5.0 62 1.1 30 50 250 3.3 0.1 0.3 MHz pF V V V V V k 53 Conditions Ratings min typ max 0.1 0.5 80 Unit A A A VCE(sat) IC=5mA. IB=0.25mA V(BR)CBO IC=10A, IE=0 V(BR)CEO IC=100A, RBE= VI(off) VI(on) R1 R1/R2 VCE=5V, IC=100A VCE=0.2V, IC=5mA Note: The specifications shown above are for each individual transistor. Marking:107 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/4139MO, TS No.3076-1/2 FC108 Sample Application Circuit No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3076-2/2 |
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